270 research outputs found

    Accounting for hotels

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    Thesis (M.B.A.)—Boston Universit

    Subquotients of Hecke C*-algebras

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    We realize the Hecke C*-algebra CQ of Bost and Connes as a direct limit of Hecke C*-algebras which are semigroup crossed products by NF, for F a finite set of primes. For each approximating Hecke C*-algebra we describe a composition series of ideals. In all cases there is a large type I ideal and a commutative quotient, and the intermediate subquotients are direct sums of simple C*-algebras. We can describe the simple summands as ordinary crossed products by actions of ZS for S a finite set of primes. When |S|=1, these actions are odometers and the crossed products are Bunce–Deddens algebras; when |S|\u3e1, the actions are an apparently new class of higher-rank odometer actions, and the crossed products are an apparently new class of classifiable AT-algebras

    Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts

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    Arrays of vertically oriented Si wires with diameters of 1.5 µm and lengths of up to 75 µm were grown over areas >1 cm^2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed

    10 µm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth

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    The effective electron minority-carrier diffusion length, L_(n,eff), for 2.0 µm diameter Si wires that were synthesized by Cu-catalyzed vapor-liquid-solid growth was measured by scanning photocurrent microscopy. In dark, ambient conditions, L_(n,eff) was limited by surface recombination to a value of ≤ 0.7 µm. However, a value of L_(n,eff) = 10.5±1 µm was measured under broad-area illumination in low-level injection. The relatively long minority-carrier diffusion length observed under illumination is consistent with an increased surface passivation resulting from filling of the surface states of the Si wires by photogenerated carriers. These relatively large L_(n,eff) values have important implications for the design of high-efficiency, radial-junction photovoltaic cells from arrays of Si wires synthesized by metal-catalyzed growth processes

    Volume 30, Number 1, March 2010 OLAC Newsletter

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    Digitized March 2010 issue of the OLAC Newsletter

    Secondary ion mass spectrometry of vapor−liquid−solid grown, Au-catalyzed, Si wires

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    Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by chemical vapor deposition from SiCl_4 at 1000 °C, an upper limit on the bulk Au concentration was observed to be 1.7 x 10^16 atoms/cm^3, similar to the thermodynamic equilibrium concentration at the growth temperature. However, a higher concentration of Au was observed on the sidewalls of the wires

    Volume 31, Number 2, June 2011 OLAC Newsletter

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    Digitized June 2011 issue of the OLAC Newsletter

    Volume 31, Number 1, March 2011 OLAC Newsletter

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    Digitized March 2011 issue of the OLAC Newsletter
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